IRFR9N20D MOSFET Transistor

The IRFR9N20D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR9N20D transistor as follows.

IRFR9N20D Transistor Specification

Transistor Code		IRFR9N20D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	86W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5.5V
Total Gate Charge		18nC

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