IRFR9120N MOSFET Transistor

The IRFR9120N is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR9120N transistor as follows.

IRFR9120N Transistor Specification

Transistor Code		IRFR9120N
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	39W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		18nC

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