IRFR8314PBF MOSFET Transistor

The IRFR8314PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR8314PBF transistor as follows.

IRFR8314PBF Transistor Specification

Transistor Code		IRFR8314PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0022Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		908pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		2.2V

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