IRFR5505GPBF MOSFET Transistor

The IRFR5505GPBF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR5505GPBF transistor as follows.

IRFR5505GPBF Transistor Specification

Transistor Code		IRFR5505GPBF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	18A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	57W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		32nC

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