IRFR5410 MOSFET Transistor

The IRFR5410 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR5410 transistor as follows.

IRFR5410 Transistor Specification

Transistor Code		IRFR5410
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.205Ohm
Power Dissipation (Maximum)	PD	66W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		38.7nC

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