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IRFR3910PBF MOSFET Transistor

The IRFR3910PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR3910PBF transistor as follows.

Circuit diagram symbol of the IRFR3910PBF transistor

IRFR3910PBF Transistor Specification

Transistor Code IRFR3910PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252AA
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 16A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.115Ohm
Power Dissipation (Maximum) PD 79W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 27nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 44nC

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