IRFR3708PBF MOSFET Transistor

The IRFR3708PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR3708PBF transistor as follows.

IRFR3708PBF Transistor Specification

Transistor Code		IRFR3708PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	61A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	87W
Drain-Source Capacitance		707pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		24nC

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