IRFR3518 MOSFET Transistor

The IRFR3518 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR3518 transistor as follows.

IRFR3518 Transistor Specification

Transistor Code		IRFR3518
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	38A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	110W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		37nC

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