IRFR3411PBF MOSFET Transistor

The IRFR3411PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR3411PBF transistor as follows.

IRFR3411PBF Transistor Specification

Transistor Code		IRFR3411PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252AA
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	32A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.044Ohm
Power Dissipation (Maximum)	PD	130W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		48nC

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