IRFR214 MOSFET Transistor

The IRFR214 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR214 transistor as follows.

IRFR214 Transistor Specification

Transistor Code		IRFR214
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252AA
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	25W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		8.2nC

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