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IRFR210PBF MOSFET Transistor

The IRFR210PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR210PBF transistor as follows.

Circuit diagram symbol of the IRFR210PBF transistor

IRFR210PBF Transistor Specification

Transistor Code IRFR210PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 53pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 17nS
Gate-Threshold Voltage (Maximum) 4V

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