IRFR12N25DPBF MOSFET Transistor

The IRFR12N25DPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR12N25DPBF transistor as follows.

IRFR12N25DPBF Transistor Specification

Transistor Code		IRFR12N25DPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	14A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.26Ohm
Power Dissipation (Maximum)	PD	144W
Drain-Source Capacitance		130pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		5V

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