IRFR1205PBF MOSFET Transistor

The IRFR1205PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR1205PBF transistor as follows.

IRFR1205PBF Transistor Specification

Transistor Code		IRFR1205PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.027Ohm
Power Dissipation (Maximum)	PD	107W
Drain-Source Capacitance		410pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		69nS
Gate-Threshold Voltage (Maximum)		4V

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