IRFR110PBF MOSFET Transistor

The IRFR110PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR110PBF transistor as follows.

IRFR110PBF Transistor Specification

Transistor Code		IRFR110PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.54Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		4V

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