IRFR1018EPBF MOSFET Transistor

The IRFR1018EPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR1018EPBF transistor as follows.

IRFR1018EPBF Transistor Specification

Transistor Code		IRFR1018EPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	56A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0084Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		4V

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