IRFR1010Z MOSFET Transistor

The IRFR1010Z is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR1010Z transistor as follows.

IRFR1010Z Transistor Specification

Transistor Code		IRFR1010Z
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	91A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0075Ohm
Power Dissipation (Maximum)	PD	140W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		63nC

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