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IRFR020PBF MOSFET Transistor

The IRFR020PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR020PBF transistor as follows.

Circuit diagram symbol of the IRFR020PBF transistor

IRFR020PBF Transistor Specification

Transistor Code IRFR020PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 14A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 42W
Drain-Source Capacitance 360pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 58nS
Gate-Threshold Voltage (Maximum) 4V

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