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IRFR010PBF MOSFET Transistor

The IRFR010PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFR010PBF transistor as follows.

Circuit diagram symbol of the IRFR010PBF transistor

IRFR010PBF Transistor Specification

Transistor Code IRFR010PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 50V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 25W
Drain-Source Capacitance 150pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 33nS
Gate-Threshold Voltage (Maximum) 4V

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