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IRFPS40N60K MOSFET Transistor

The IRFPS40N60K is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPS40N60K transistor as follows.

Circuit diagram symbol of the IRFPS40N60K transistor

IRFPS40N60K Transistor Specification

Transistor Code IRFPS40N60K
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-274AA
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.13Ohm
Power Dissipation (Maximum) PD 570W
Drain-Source Capacitance 750pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 110nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 330nC

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