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IRFPS3815PBF MOSFET Transistor

The IRFPS3815PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPS3815PBF transistor as follows.

Circuit diagram symbol of the IRFPS3815PBF transistor

IRFPS3815PBF Transistor Specification

Transistor Code IRFPS3815PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-274AA
Drain-Source Voltage (Maximum) VDS 150V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 105A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.015Ohm
Power Dissipation (Maximum) PD 441W
Drain-Source Capacitance 1570pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 130nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 390nC

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