IRFPS37N50APBF MOSFET Transistor

The IRFPS37N50APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPS37N50APBF transistor as follows.

IRFPS37N50APBF Transistor Specification

Transistor Code		IRFPS37N50APBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-274AA
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	36A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	446W
Drain-Source Capacitance		810pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		180nC

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