IRFPS35N50LPBF MOSFET Transistor

The IRFPS35N50LPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPS35N50LPBF transistor as follows.

IRFPS35N50LPBF Transistor Specification

Transistor Code		IRFPS35N50LPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-274AA
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.145Ohm
Power Dissipation (Maximum)	PD	450W
Drain-Source Capacitance		590pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		230nC

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