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IRFPS30N60KPBF MOSFET Transistor

The IRFPS30N60KPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPS30N60KPBF transistor as follows.

Circuit diagram symbol of the IRFPS30N60KPBF transistor

IRFPS30N60KPBF Transistor Specification

Transistor Code IRFPS30N60KPBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-274AA
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 30A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.19Ohm
Power Dissipation (Maximum) PD 450W
Drain-Source Capacitance 530pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 220nC

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