IRFPE50PBF MOSFET Transistor

The IRFPE50PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPE50PBF transistor as follows.

IRFPE50PBF Transistor Specification

Transistor Code		IRFPE50PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		38nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		200nC

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