IRFPE30PBF MOSFET Transistor

The IRFPE30PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPE30PBF transistor as follows.

IRFPE30PBF Transistor Specification

Transistor Code		IRFPE30PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247AC
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		310pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		4V

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