IRFPC60PBF MOSFET Transistor

The IRFPC60PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPC60PBF transistor as follows.

IRFPC60PBF Transistor Specification

Transistor Code		IRFPC60PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	16A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		54nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		210nC

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