IRFPC50APBF MOSFET Transistor

The IRFPC50APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFPC50APBF transistor as follows.

IRFPC50APBF Transistor Specification

Transistor Code		IRFPC50APBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.58Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V

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