IRFP362 MOSFET Transistor

The IRFP362 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP362 transistor as follows.

IRFP362 Transistor Specification

Transistor Code		IRFP362
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.25Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		550pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		4V

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