IRFP264N MOSFET Transistor

The IRFP264N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP264N transistor as follows.

IRFP264N Transistor Specification

Transistor Code		IRFP264N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	44A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	380W
Drain-Source Capacitance		480pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		62nS

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