IRFP260M MOSFET Transistor

The IRFP260M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP260M transistor as follows.

IRFP260M Transistor Specification

Transistor Code		IRFP260M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	300W
Total Gate Charge		156nC

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