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IRFP254PBF MOSFET Transistor

The IRFP254PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP254PBF transistor as follows.

Circuit diagram symbol of the IRFP254PBF transistor

IRFP254PBF Transistor Specification

Transistor Code IRFP254PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247AC
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.14Ohm
Power Dissipation (Maximum) PD 190W
Drain-Source Capacitance 620pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 63nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 140nC

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