IRFP252R MOSFET Transistor

The IRFP252R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP252R transistor as follows.

IRFP252R Transistor Specification

Transistor Code		IRFP252R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		125nS
Gate-Threshold Voltage (Maximum)		4V

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