IRFP252 MOSFET Transistor

The IRFP252 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP252 transistor as follows.

IRFP252 Transistor Specification

Transistor Code		IRFP252
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	150W
Operating Junction Temperature (Maximum)		150°C

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