IRFP23N50L MOSFET Transistor

The IRFP23N50L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP23N50L transistor as follows.

IRFP23N50L Transistor Specification

Transistor Code		IRFP23N50L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	23A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.235Ohm
Power Dissipation (Maximum)	PD	370W
Drain-Source Capacitance		380pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		150nC

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