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IRFP23N50L MOSFET Transistor

The IRFP23N50L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP23N50L transistor as follows.

Circuit diagram symbol of the IRFP23N50L transistor

IRFP23N50L Transistor Specification

Transistor Code IRFP23N50L
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO247AC
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 23A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.235Ohm
Power Dissipation (Maximum) PD 370W
Drain-Source Capacitance 380pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 94nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 150nC

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