IRFP22N60C3PBF MOSFET Transistor

The IRFP22N60C3PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP22N60C3PBF transistor as follows.

IRFP22N60C3PBF Transistor Specification

Transistor Code		IRFP22N60C3PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	280W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		39nS
Gate-Threshold Voltage (Maximum)		4V

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