IRFP22N50APBF MOSFET Transistor

The IRFP22N50APBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP22N50APBF transistor as follows.

IRFP22N50APBF Transistor Specification

Transistor Code		IRFP22N50APBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.23Ohm
Power Dissipation (Maximum)	PD	277W
Drain-Source Capacitance		513pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		94nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		120nC

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