IRFP064VPBF MOSFET Transistor

The IRFP064VPBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP064VPBF transistor as follows.

IRFP064VPBF Transistor Specification

Transistor Code		IRFP064VPBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247AC
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	130A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	250W
Drain-Source Capacitance		1330pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		200nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		260nC

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