IRFP048PBF MOSFET Transistor

The IRFP048PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP048PBF transistor as follows.

IRFP048PBF Transistor Specification

Transistor Code		IRFP048PBF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	190W
Drain-Source Capacitance		1300pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		110nC

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