IRFP048N MOSFET Transistor

The IRFP048N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFP048N transistor as follows.

IRFP048N Transistor Specification

Transistor Code		IRFP048N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3P
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	62A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	130W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		59.3nC

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