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IRFNJ9130 MOSFET Transistor

The IRFNJ9130 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFNJ9130 transistor as follows.

Circuit diagram symbol of the IRFNJ9130 transistor

IRFNJ9130 Transistor Specification

Transistor Code IRFNJ9130
Transistor Type MOSFET
Control Channel Type P-Channel
Package SMD05
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.3Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 350pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 140nS
Gate-Threshold Voltage (Maximum) 4V

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