IRFN9130 MOSFET Transistor

The IRFN9130 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN9130 transistor as follows.

IRFN9130 Transistor Specification

Transistor Code		IRFN9130
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220SM
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		800pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		29nC

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