IRFN340SMD MOSFET Transistor

The IRFN340SMD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN340SMD transistor as follows.

IRFN340SMD Transistor Specification

Transistor Code		IRFN340SMD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SMD1
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		3500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		92nS
Gate-Threshold Voltage (Maximum)		4V

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