IRFN250 MOSFET Transistor

The IRFN250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN250 transistor as follows.

IRFN250 Transistor Specification

Transistor Code		IRFN250
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SM
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		3500pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		115nC

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