IRFN150 MOSFET Transistor

The IRFN150 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN150 transistor as follows.

IRFN150 Transistor Specification

Transistor Code		IRFN150
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SM
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	27A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.081Ohm
Power Dissipation (Maximum)	PD	100W
Drain-Source Capacitance		3700pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		125nC

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