IRFN130 MOSFET Transistor

The IRFN130 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFN130 transistor as follows.

IRFN130 Transistor Specification

Transistor Code		IRFN130
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220SM
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.22Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		650pF
Operating Junction Temperature (Maximum)		150°C

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