IRFMG40 MOSFET Transistor

The IRFMG40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFMG40 transistor as follows.

IRFMG40 Transistor Specification

Transistor Code		IRFMG40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V

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