IRFM250D MOSFET Transistor

The IRFM250D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM250D transistor as follows.

IRFM250D Transistor Specification

Transistor Code		IRFM250D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254AA
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		700pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		190nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		115nC

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