IRFM250 MOSFET Transistor

The IRFM250 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM250 transistor as follows.

IRFM250 Transistor Specification

Transistor Code		IRFM250
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO254
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	27.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		3500pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		85nC

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