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IRFM220BTF_FP001 MOSFET Transistor

The IRFM220BTF_FP001 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM220BTF_FP001 transistor as follows.

Circuit diagram symbol of the IRFM220BTF_FP001 transistor

IRFM220BTF_FP001 Transistor Specification

Transistor Code IRFM220BTF_FP001
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.13A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.8Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 4V

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