IRFM120A MOSFET Transistor

The IRFM120A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM120A transistor as follows.

IRFM120A Transistor Specification

Transistor Code		IRFM120A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	2.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		370pF
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		16nC

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